1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure
Rent:
Rent this article for
USD
10.1063/1.3664781
/content/aip/journal/apl/99/22/10.1063/1.3664781
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664781
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration of measurement setup. (b) I-V property of the Cu/HfO2/Pt diode. (c) Cu 2p 3/2 HX-PES for the Cu/HfO2/Pt diode under a bias of 0 V at a TOA of 20°. The inset shows the difference peak, which is the Cu 2p 3/2 peak at 0 V minus that at 1.3 V. (d) Hf 3d 5/2 HX-PES at 1.3 V and a TOA of 20°. Solid lines show measured spectra, and open circles show sum-fitted curves. Dashed lines are fitted curves for each bond: Cu, Cu2O, HfO2, and Hf-Cu-O.

Image of FIG. 2.
FIG. 2.

(Color online) Applied bias dependences of intensity ratios of (a) Cu2O to Cu (circles), (b) Hf-Cu-O to Hf-O (triangles), and (c) Cu 2p 3/2 to Hf 3d 5/2 (squares). Open and solid symbols show HX-PES at TOAs of 85° and 20°, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) O 1 s HX-PES under a bias of 1.3 V at a TOA of 20°. Solid lines show measured spectra, and open circles show sum-fitted curves. Dashed lines are fitted curves for each bond: O-Hf, O-Cu(+1), O-OH, and O-Hf-Cu. Applied bias dependences of intensity ratio of (b) O-Cu (circles) and (c) O-Hf-Cu (squares) to total intensity of O1s at a TOA of 20°.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic illustration of the Cu/HfO2 interface (a) in initial state and (b) under bias operation.

Loading

Article metrics loading...

/content/aip/journal/apl/99/22/10.1063/1.3664781
2011-12-01
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664781
10.1063/1.3664781
SEARCH_EXPAND_ITEM