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(Color online) Top-view SEM images of an AlGaN/GaN HEMT stressed at Vds = 0 V and Vgs = −40 V for 60 s (a), 600 s (b), and 6000 s (c). (d) Auger electron spectra results for three different regions of the transistor surface. Panel (e) shows the surface morphology of the device (c) after removal of the gate, and panel (f) shows an AFM depth profile across the gate electrode of the same device.
Top-view SEM image of the devices stressed at Vsd = 30 V and Vgd = −12 V (a) and at Vds = 30 V and Vgs = −12 V (b) for 6000 s.
(a) Top-view SEM image of the gate region after metal removal for the device stressed at Vds = 0 V and Vgs = −40 for 6000 s at room temperature in air. (b) Top-view SEM image of the same region in the device stressed in a vacuum of 3 × 10−5 Torr.
(Color online) Ig-Vg characteristics (a) and Ids-Vg characteristics (b) in linear and semi-log scale (on inset) for devices stressed at Vds = 0 V and Vgs = −40 V for 6000 s in air and in a vacuum of 3 × 10−5 Torr.
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