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The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration
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10.1063/1.3665070
/content/aip/journal/apl/99/22/10.1063/1.3665070
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665070

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic conduction band profile of the active region. (b) Schematic of the gated Hall-bar device.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The measured conductance σ 2 D , charge carrier concentration n 2 D , and mobility μ 2 D transients when the QD s1-states are being charged. (b) Transient amplitudes as a function of gate bias VG . The many-particle ground states with different numbers of electrons (N = 1…6) can be distinguished.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The equilibrium conductance σ 2 D , carrier concentration n 2 D , and mobility μ 2 D of the 2DEG versus gate bias after an elapsed time of 100 ms. (b) The relative change of the three transport parameters in percent for a pulse amplitude of ΔVG  = 40 mV.

Tables

Generic image for table
Table I.

The influence of the individually resolved charged QD states on the different transport parameters of the 2DEG. The total change results from the sum of the different QD states for two electrons charged into the s-shell and 4 electrons charged into the p-shell.

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/content/aip/journal/apl/99/22/10.1063/1.3665070
2011-11-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665070
10.1063/1.3665070
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