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(Color online) (a) Schematic illustration of the measured Schottky device. (b) Measured topography and (c) surface potential of the n-type Si nanowire device under a reverse bias of 0.5 V. (d) Current-voltage characteristics of the n-type measured Schottky device.
(Color online) (a) Measured surface potential profiles along n-type Si nanowire Schottky device under several applied reverse biases. (b) Simulated (color solid lines), measured (symbols), and convoluted (black solid lines) surface potential profiles along the reverse biased n-type Schottky device.
(Color online) (a) Simulated (solid lines) and measured (symbols) surface potential profiles along reverse biased UID Si nanowire Schottky device. The simulated potential profiles include the presence of bulk deep traps with a concentration of 5 × 1017 cm−3 and energies of 0.55 and 0.35 eV above the valence-band minimum for acceptor and donor type traps, respectively, as for Au atoms in Si.21 (b) Comparison between the depletion regions of the UID (red symbols) and the n-type (blue symbols) Si nanowires (the profiles are scaled for easier comparison).
(Color online) Measured (color symbols) and simulated (solid black lines) surface potential profiles along an UID Si nanowire Schottky device under several applied reverse biases showing the disagreement between measurements and simulation. (a) Simulated potential profiles for the case of boron doped nanowires with a dopant concentration of 1 × 1015 cm−3. (b) Simulated potential profiles for the case of a U-shaped surface state distribution with exponential distributions (between conduction (EC ) and valence (EV ) bands) for acceptor type states: cm−2 and for donor type traps: cm−2.
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