1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Direct measurement of nanowire Schottky junction depletion region
Rent:
Rent this article for
USD
10.1063/1.3665182
/content/aip/journal/apl/99/22/10.1063/1.3665182
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665182
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration of the measured Schottky device. (b) Measured topography and (c) surface potential of the n-type Si nanowire device under a reverse bias of 0.5 V. (d) Current-voltage characteristics of the n-type measured Schottky device.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Measured surface potential profiles along n-type Si nanowire Schottky device under several applied reverse biases. (b) Simulated (color solid lines), measured (symbols), and convoluted (black solid lines) surface potential profiles along the reverse biased n-type Schottky device.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Simulated (solid lines) and measured (symbols) surface potential profiles along reverse biased UID Si nanowire Schottky device. The simulated potential profiles include the presence of bulk deep traps with a concentration of 5 × 1017 cm−3 and energies of 0.55 and 0.35 eV above the valence-band minimum for acceptor and donor type traps, respectively, as for Au atoms in Si.21 (b) Comparison between the depletion regions of the UID (red symbols) and the n-type (blue symbols) Si nanowires (the profiles are scaled for easier comparison).

Image of FIG. 4.
FIG. 4.

(Color online) Measured (color symbols) and simulated (solid black lines) surface potential profiles along an UID Si nanowire Schottky device under several applied reverse biases showing the disagreement between measurements and simulation. (a) Simulated potential profiles for the case of boron doped nanowires with a dopant concentration of 1 × 1015 cm−3. (b) Simulated potential profiles for the case of a U-shaped surface state distribution with exponential distributions (between conduction (EC ) and valence (EV ) bands) for acceptor type states: cm−2 and for donor type traps: cm−2.

Loading

Article metrics loading...

/content/aip/journal/apl/99/22/10.1063/1.3665182
2011-11-30
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurement of nanowire Schottky junction depletion region
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665182
10.1063/1.3665182
SEARCH_EXPAND_ITEM