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(Color online) Schematic illustration of the PZT-CNT-FET with ionic liquid.
(Color online) (a) X-ray diffraction pattern of PZT synthesized on Pt/Ti/SiO2/Si and (b) P–E hysteresis loop measured on a Pt/PZT/Pt/Ti/SiO2/Si device.
(Color online) (a) Optical microscope image of the PZT-CNT-FET covered with ionic liquid. (b) AFM image of CNT channel taken through the ionic liquid covering the channel. The gap between source and drain electrodes is ∼1 μm.
(Color online) Id–Vg hysteresis characteristics (m-FET): (a) before, (b) just after dropping ionic liquid, and (c) three days after dropping ionic liquid.
(Color online) Id–Vg hysteresis characteristics (s-FET): (a) before and (b) after dropping ionic liquid.
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