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Improvement of transfer characteristic for carbon nanotube field effect transistor with poly crystalline PbZrxTi1-xO3 gate by ionic liquid
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10.1063/1.3665186
/content/aip/journal/apl/99/22/10.1063/1.3665186
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665186
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic illustration of the PZT-CNT-FET with ionic liquid.

Image of FIG. 2.
FIG. 2.

(Color online) (a) X-ray diffraction pattern of PZT synthesized on Pt/Ti/SiO2/Si and (b) P–E hysteresis loop measured on a Pt/PZT/Pt/Ti/SiO2/Si device.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Optical microscope image of the PZT-CNT-FET covered with ionic liquid. (b) AFM image of CNT channel taken through the ionic liquid covering the channel. The gap between source and drain electrodes is ∼1 μm.

Image of FIG. 4.
FIG. 4.

(Color online) Id–Vg hysteresis characteristics (m-FET): (a) before, (b) just after dropping ionic liquid, and (c) three days after dropping ionic liquid.

Image of FIG. 5.
FIG. 5.

(Color online) Id–Vg hysteresis characteristics (s-FET): (a) before and (b) after dropping ionic liquid.

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/content/aip/journal/apl/99/22/10.1063/1.3665186
2011-12-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of transfer characteristic for carbon nanotube field effect transistor with poly crystalline PbZrxTi1-xO3 gate by ionic liquid
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665186
10.1063/1.3665186
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