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(Color online) Load–time relation during partial loading–unloading for both c-plane and m-plane GaN crystals. Inset shows schematic of the nanoECR system.
(Color online) Relation between forward current density and time during partial loading–unloading obtained for (a) c-plane and (b) m-plane GaN crystals with constant forward voltage V f = 5 V.
(Color online) I–V characteristics obtained for (a) c-plane and (b) m-plane GaN crystals with four constant indentation loads P. (c) The relation between Schottky barrier height φ B and indentation load P.
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