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Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal
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10.1063/1.3665250
/content/aip/journal/apl/99/22/10.1063/1.3665250
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665250
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Load–time relation during partial loading–unloading for both c-plane and m-plane GaN crystals. Inset shows schematic of the nanoECR system.

Image of FIG. 2.
FIG. 2.

(Color online) Relation between forward current density and time during partial loading–unloading obtained for (a) c-plane and (b) m-plane GaN crystals with constant forward voltage V f = 5 V.

Image of FIG. 3.
FIG. 3.

(Color online) I–V characteristics obtained for (a) c-plane and (b) m-plane GaN crystals with four constant indentation loads P. (c) The relation between Schottky barrier height φ B and indentation load P.

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/content/aip/journal/apl/99/22/10.1063/1.3665250
2011-11-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665250
10.1063/1.3665250
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