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(Color online) (a) The schematic device structure of GaN-based PCSELs. (b) The plan-view SEM images of no-defect (H0), H3, H4 and H5 central defect structures of GaN-based PCSELs.
(Color online) (a) Measured output intensity versus input excitation energy density from the GaN-based PCSELs for H0 to H5 defect cavities. (b) Lasing spectrum of different central defect structures including H0, H3, H4, and H5.
(Color online) The ARPL diagrams of GaN-based PCSELs for (a) H3, (b) H4 (c) H5 central defects were measured by a 325 nm CW He-Cd laser. The red solid lines represent the calculated diffraction lines for the guide modes. The ARPL diagrams of PCSELs for (d) H3, (e) H4, (f) H5 central defects were measured by a 355 nm Nd:YVO4 pulse laser. The red spots in (d) to (f) represent the lasing frequency at Γ band edge.
(Color online) (a) The threshold gain and (b) the resonance wavelength varied with the different defect type from H0 to H5. The black dots and blue dots represent the calculated and experimental results.
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