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Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells
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Image of FIG. 1.
FIG. 1.

(Color online) Conduction and valence band alignment of a GaInAs/GaAsSb superlattice structure. The wavefunctions of the electrons and heavy holes are indicated.

Image of FIG. 2.
FIG. 2.

(Color online) “W” shaped design of the type-II active region. In contrast to the SL structure, the “W”-wells are separated to each other by 10 nm tensile strained GaAsSb.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of PL spectrum of the grown type II SL active region. Details of the structures are listed in Table I. The fringes on the Pl peak are caused by the strong water absorption lines around 2.6 μm.

Image of FIG. 4.
FIG. 4.

(Color online) Comparison of “W” active region grown by MBE and MOVPE for different emission wavelengths. As excitation power 50 mW, 100 mW, and 200 mW has been used for the MBE “W” sample and 50 mW, 100 mW for the MOVPE “W” sample.


Generic image for table
Table I.

The well thicknesses, composition, and number of periods of the grown type-II structures with the two different designs are listed. Furthermore, the calculation of the wavefunction overlap is indicated. Samples 1 + 3 are grown by MBE, 2 + 4 by MOVPE.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells