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(Color online) Conduction and valence band alignment of a GaInAs/GaAsSb superlattice structure. The wavefunctions of the electrons and heavy holes are indicated.
(Color online) “W” shaped design of the type-II active region. In contrast to the SL structure, the “W”-wells are separated to each other by 10 nm tensile strained GaAsSb.
(Color online) Comparison of PL spectrum of the grown type II SL active region. Details of the structures are listed in Table I. The fringes on the Pl peak are caused by the strong water absorption lines around 2.6 μm.
(Color online) Comparison of “W” active region grown by MBE and MOVPE for different emission wavelengths. As excitation power 50 mW, 100 mW, and 200 mW has been used for the MBE “W” sample and 50 mW, 100 mW for the MOVPE “W” sample.
The well thicknesses, composition, and number of periods of the grown type-II structures with the two different designs are listed. Furthermore, the calculation of the wavefunction overlap is indicated. Samples 1 + 3 are grown by MBE, 2 + 4 by MOVPE.
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