1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical characteristics of asymmetrical silicon nanowire field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.3665261
/content/aip/journal/apl/99/22/10.1063/1.3665261
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665261
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) A plan-view secondary-electron microscope image of an asymmetric silicon nanowire FET, and a schematic illustration of the asymmetric SiNW nFET with (b) control and (c) source/drain-flipped configurations.

Image of FIG. 2.
FIG. 2.

Drain-induced barrier lowering of asymmetric silicon nanowire nFETs characterized with control and source/drain-flipped configurations.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Transfer characteristics and transconductance of the asymmetric silicon nanowire nFET measured at 40 K with control and source/drain-flipped configurations and a drain voltage of 50 mV. (b) Effective carrier mobility at the effective gate voltage of 1.0 V with the control and source/drain-flipped configurations obtained using the Y-function method on the different measurement temperatures.

Loading

Article metrics loading...

/content/aip/journal/apl/99/22/10.1063/1.3665261
2011-12-02
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of asymmetrical silicon nanowire field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665261
10.1063/1.3665261
SEARCH_EXPAND_ITEM