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Effect of H on interface properties of Al2O3/In0.53Ga0.47As
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10.1063/1.3665395
/content/aip/journal/apl/99/22/10.1063/1.3665395
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665395
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Multi-frequency C-V characteristics (1 k, 10 k, 100 k, and 1 MHz) of an Au/Al2O3/InGaAs MOS capacitor. Inset shows the corresponding Dit.

Image of FIG. 2.
FIG. 2.

IETS of the Al2O3/InGaAs: (a) sample A and (b) sample C. The gate bias was negative in the measurement.

Image of FIG. 3.
FIG. 3.

TEM images of the Al2O3/InGaAs: (a) sample A and (b) sample C.

Image of FIG. 4.
FIG. 4.

(Color online) As3d XPS spectra of the Al2O3/InGaAs: (a) sample A and (b) sample C.

Image of FIG. 5.
FIG. 5.

(Color online) In3d5/2 XPS spectra of the Al2O3/InGaAs samples.

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/content/aip/journal/apl/99/22/10.1063/1.3665395
2011-11-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of H on interface properties of Al2O3/In0.53Ga0.47As
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665395
10.1063/1.3665395
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