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Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy
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10.1063/1.3665621
/content/aip/journal/apl/99/22/10.1063/1.3665621
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665621
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sketch of the sample structures. The layers in (a), (b), and (c) correspond to the 30-nm-thick films of NiTiSn and NiZr0.5Hf0.5Sn compounds grown on different buffer layers. (d) presents a bilayer sample and (e) shows the superlattice.

Image of FIG. 2.
FIG. 2.

(Color online) Valence band spectra of the single NiTiSn and NiZr0.5Hf0.5Sn films grown on different buffer layers (a) compared to polycrystalline NiTiSn and NiZr0.5Hf0.5Sn bulk samples (b). (Note that the additional intensity at below −10 eV seen in (a) emerges from the AlO x cap layer).

Image of FIG. 3.
FIG. 3.

(Color online) Polarization-dependent valence band spectra of a NiZr0.5Hf0.5Sn/NiTiSn bilayer (a) and the NiTiSn/NiZr0.5Hf0.5Sn superlattice (b). The spectra obtained with s and p polarized x-rays are shown together with the difference curves.

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/content/aip/journal/apl/99/22/10.1063/1.3665621
2011-11-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3665621
10.1063/1.3665621
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