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(Color online) Multi-frequency (1 kHz–1 MHz) C-V curves from (a) as-deposited and (b) forming gas annealed Pt/∼7 nm TiO2/∼2 nm Al2O3/n-In0.53Ga0.47As MOSCAPs.
(Color online) Plot of leakage current density versus CET for the Al2O3 single layers (•) and TiO2/Al2O3 bilayers (▪). The leakage currents were measured at the flatband voltage.
(Color online) (a) Cross-sectional TEM image and (b) plan-view TEM image of TiO2/Al2O3 bilayer stack. (c) Selected area electron diffraction pattern showing anatase phase predominant.
(Color online) (a) Valence band spectra obtained from the InGaAs wafer, Al2O3/InGaAs, and TiO2/Al2O3/InGaAs samples. (b) Oxygen 1s energy loss spectra for the TiO2/Al2O3/InGaAs sample. The inset is a deconvoluted O 1s core-level spectrum of this sample. (c) Band alignment diagram of TiO2/Al2O3/InGaAs system.
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