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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
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10.1063/1.3662966
/content/aip/journal/apl/99/23/10.1063/1.3662966
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3662966
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Multi-frequency (1 kHz–1 MHz) C-V curves from (a) as-deposited and (b) forming gas annealed Pt/∼7 nm TiO2/∼2 nm Al2O3/n-In0.53Ga0.47As MOSCAPs.

Image of FIG. 2.
FIG. 2.

(Color online) Plot of leakage current density versus CET for the Al2O3 single layers (•) and TiO2/Al2O3 bilayers (▪). The leakage currents were measured at the flatband voltage.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Cross-sectional TEM image and (b) plan-view TEM image of TiO2/Al2O3 bilayer stack. (c) Selected area electron diffraction pattern showing anatase phase predominant.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Valence band spectra obtained from the InGaAs wafer, Al2O3/InGaAs, and TiO2/Al2O3/InGaAs samples. (b) Oxygen 1s energy loss spectra for the TiO2/Al2O3/InGaAs sample. The inset is a deconvoluted O 1s core-level spectrum of this sample. (c) Band alignment diagram of TiO2/Al2O3/InGaAs system.

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/content/aip/journal/apl/99/23/10.1063/1.3662966
2011-12-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3662966
10.1063/1.3662966
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