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(Color online) XRD pattern (a) and reciprocal lattice map (b) of the SLTO/LSAT(103) peak of a 1 at. % La doped STO film with A/B = 1.0. The inset to (a) shows the out-of-plane lattice parameters for SLTO films versus A/B = (La + Sr)/Ti ratio.
300 K Hall mobility versus A/B ratio ((La+Sr)/Ti or Sr/(Ti+Nb)) for La (open circles) or Nb (hatched circles) doped STO films grown on LSAT. The dopant concentrations range from 1.0 to 1.4 at. %. Inset of figure shows the temperature dependence of nH.
S versus nH, measured at 300 K, for donor doped STO single crystals and Nb and/or La doped sputter deposited STO thin films. Also shown on the plot is data from the earlier studies of Frederikse and Hosler,15 Okuda et al.,16 and Ohta et al. 17
(Color online) Temperature dependence of S for a Nb and La doped film with = 9.1 × 1021 cm−3 over the temperature range of 300 K to 600 K. The inset shows the temperature dependence of S for 0.5 at. % and 1 at. % La doped STO single crystals and a 1.1 at. % La doped film with A/B = 1.
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