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High-T c and high-J c SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Intensity of the (003) reflection and (b) the variation of c 0 of SmFeAsO films on CaF2 substrate as a function of O2 flow during growth. In the figure, the data for two series of films, one for Sm 1.4 Å/s (triangles) and the other for 0.7 Å/s (circles), are included.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD patterns and (b) ρ-T curves of F-diffused SmFeAsO films grown on various substrates, CaF2(001), SrF2(001), and BaF2(001). The inset in (b) is an enlarged view for a superconducting transition.

Image of FIG. 3.
FIG. 3.

(Color online) Plot of T c against c 0 (c 0 after F diffusion) for SmFeAs(O,F) films prepared under various growth conditions on fluoride substrates.

Image of FIG. 4.
FIG. 4.

(Color online) J c of the SmFeAs(O,F) film with resistive  = 57.1 K in a magnetic field applied along c-axis at 5 K to 40 K. The inset is the zero-field-cooled and field-cooled magnetization for the film in the magnetic field of 0.1 Oe applied along the c-axis.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy