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Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
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10.1063/1.3665033
/content/aip/journal/apl/99/23/10.1063/1.3665033
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665033
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical transfer characteristics of high-k/In0.75Ga0.25As MOSHEMTs for L = 170 μm and W = 20 μm for various temperatures and Vds = 50 mV with a TEM image of the gate stack region shown in the inset.

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of μ Hall and μ eff (f = 1 MHz) versus the corresponding carrier density (n, nHall) at room temperature for a high-k/In0.75Ga0.25As MOSHEMT with 2 nm InP top barrier layer, L = 170 μm, W = 20 μm, Vg = −1 V to 1 V range, and Vds = 50 mV.

Image of FIG. 3.
FIG. 3.

(a) (Color online) Comparison of Hall channel carrier density (nHall) and split CV carrier density (n) at room temperature in a high-k/In0.75Ga0.25As MOSHEMT with L = 170 μm and W = 20 μm and Vds = 50 mV (b) Simulated nHall with a constant InP/In0.75Ga0.25As barrier offset = 0.2 eV for three cases of μ 2 = μ 1 = 7000 cm2/Vs (comparable to single channel), μ 2 = 1/4 μ 1 and μ 2 = 1/10 μ 1 in bilayer semiconductors (see Ref. 15).

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/content/aip/journal/apl/99/23/10.1063/1.3665033
2011-12-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665033
10.1063/1.3665033
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