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Diffusion and incorporation of Cd in solar-grade Cu(In,Ga)Se2 layers
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) 109Cd radiotracer depth profiles in CIGSe resulting from lamp-oven diffusion treatments at different temperatures: (a) 375 °C, 10 min; (b) 425 °C, 3 min; (c) 325 °C, 15 min; and (d) 275 °C, 90 min. The solid lines represent fits of a Gaussian function. For clarity, the data are arbitrarily shifted along the ordinate. Profile c crosses the interface to the Mo backside contact layer.

Image of FIG. 2.
FIG. 2.

(Color online) Cd diffusion coefficients in polycrystalline CI(G)Se films as a function of inverse temperature. The symbols result from coarse- and fine-grained CIGSe after lamp-oven or furnace annealing, as indicated (this work). The solid line shows the best fit of the Arrhenius equation for coarse-grained material; see Eq. (1). The dashed line represents previously reported RBS data on CISe (see Ref. 9).

Image of FIG. 3.
FIG. 3.

(Color online) APT analysis of a CIGSe film after diffusion of Cd at 450 °C for 15 min from an elemental surface layer. Upper part: mass spectrum showing the abundance of Cd and In isotopes. Lower part: typical 114Cd distribution in a volume of 250 × 90 × 90 nm3. The total Cd concentration amounts to 3.3 ± 0.7 at.%.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion and incorporation of Cd in solar-grade Cu(In,Ga)Se2 layers