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Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier
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10.1063/1.3665252
/content/aip/journal/apl/99/23/10.1063/1.3665252
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665252
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Experimental and simulated I-V and IQE curves of the conventional LED.

Image of FIG. 2.
FIG. 2.

(Color online) Simulated (a) I-V and (b) IQE curves of the conventional and GLB LEDs.

Image of FIG. 3.
FIG. 3.

(Color online) Distribution of (a)-(d) electron and (e)-(h) hole concentrations of the conventional and GLB LEDs at 24 mA.

Image of FIG. 4.
FIG. 4.

(Color online) Radiative recombination rates of the conventional and GLB LEDs at 24 mA.

Image of FIG. 5.
FIG. 5.

(Color online) (a)-(d) Energy band diagrams of the conventional and GLB LEDs at 24 mA. (e)-(h) Enlarged drawing of the valence band near p-type region.

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/content/aip/journal/apl/99/23/10.1063/1.3665252
2011-12-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665252
10.1063/1.3665252
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