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(Color online) (a) Top SEM view of prepared silicon pillar with 2 μm diameter. (b) Top SEM view of graphene transferred on the SiPA substrate with the pillar height of 200 nm. (c) The reflectance of SIPA with various pillar height as well as planar silicon substrate. Inset shows the principle of antireflective effect of SiPA substrate. (d) Schematic view of a G/SiPA Schottky solar cell. (e) Photograph of a G/SiPA solar cell with 0.09 cm2 junction area. Silver wire was glued to the front electrode for test with silver paste.
(Color online) (a) The I-V curves of one typical G/SiPA solar cell in dark and under illumination. (b) Comparison of I-V curves of the solar cells under illumination with different HNO3 treatment durations. (c) J sc, (d) V oc, (e) FF, (f) η of three G/SiPA solar cells as a function of HNO3 doping time. All of them increase with the doping time and then reach a saturation state.
(Color online) Application of a G/SiPA device used as a light sensor. The device is connected to a signal amplifier circuit to drive a liquid crystal display screen, which is transparent under high voltage and opaque under low voltage. (a) The screen is opaque when the illumination is weak and (b) the screen becomes transparent when the illumination is strong.
Data for another three G/SiPA samples before and after HNO3 treatment.
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