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(Color online) Structure of the lateral p-i-n junction gated photodiode. Schematic at the top shows the n and p regions, the gate dielectric and two metal gates as well as the extent of the depletion region, and the hole accumulation region. The scanning electron micrographs at the bottom show the physical device with a close-up of the gate region on the right.
(Color online) Current-voltage characteristics of the device at different gate voltages; taken with red and blue illumination. Referred to the extreme right of the plot, the color sequence from top to bottom is: blue, red, blue, red, red, blue, red, red, blue, blue. Inset shows the ratios of currents under red and blue illumination plotted against gate bias.
(Color online) Spectral responsivity of the lateral p-i-n junction photodiode at different gate biases. The inset shows a plot of the position of the responsivity peak at different gate biases (taken at VDS = 20 V).
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