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Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition
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10.1063/1.3665617
/content/aip/journal/apl/99/23/10.1063/1.3665617
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665617

Figures

Image of FIG. 1.
FIG. 1.

TRMC signals of a n–type crystalline silicon substrate (2 Ω cm, 275 μm thick) covered on both face with a-SiCx:H induced by 1064 nm light pulses at the excitation densities as indicated. Intensity of the laser was 4.15 mJ cm 2 at OD0.

Image of FIG. 2.
FIG. 2.

TRMC measurements of a p-type crystalline silicon sample (100 Ω cm, 525 μm thick) covered with a-SiCx:H films at both faces induced by 1064 nm pulses at different excitation densities (OD4 until OD6). Laser intensity at OD0 = 4 mJ cm−2.

Image of FIG. 3.
FIG. 3.

Semi logarithmic representation of TRMC measurements of a p-type crystalline silicon sample (100 Ω cm and 525 μm thick) covered with a-SiNx:H (full markers) and a-SiCx:H (hollow markers) for three different laser intensities. OD4 (square), OD5 (triangle), and OD6 (circle). Excitation was performed with a 1064 nm wavelength. Intensity of the laser was 4 mJ cm−2 at OD0.

Tables

Generic image for table
Table I.

Dark conductance measured for different samples, the substrate (p type 100  cm crystalline silicon and 525 m thick) is measured bare, covered with a-SiCx:H and a-SiNx:H.

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/content/aip/journal/apl/99/23/10.1063/1.3665617
2011-12-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665617
10.1063/1.3665617
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