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TRMC signals of a n–type crystalline silicon substrate (2 Ω cm, 275 μm thick) covered on both face with a-SiCx:H induced by 1064 nm light pulses at the excitation densities as indicated. Intensity of the laser was 4.15 mJ cm− 2 at OD0.
TRMC measurements of a p-type crystalline silicon sample (100 Ω cm, 525 μm thick) covered with a-SiCx:H films at both faces induced by 1064 nm pulses at different excitation densities (OD4 until OD6). Laser intensity at OD0 = 4 mJ cm−2.
Semi logarithmic representation of TRMC measurements of a p-type crystalline silicon sample (100 Ω cm and 525 μm thick) covered with a-SiNx:H (full markers) and a-SiCx:H (hollow markers) for three different laser intensities. OD4 (square), OD5 (triangle), and OD6 (circle). Excitation was performed with a 1064 nm wavelength. Intensity of the laser was 4 mJ cm−2 at OD0.
Dark conductance measured for different samples, the substrate (p type 100 cm crystalline silicon and 525 m thick) is measured bare, covered with a-SiCx:H and a-SiNx:H.
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