1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effects of W diffusion barrier on inhibition of AlN formation in Ti/W/Al ohmic contacts on N-face n-GaN
Rent:
Rent this article for
USD
10.1063/1.3665623
/content/aip/journal/apl/99/23/10.1063/1.3665623
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665623
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Contact resistivities as a function of (a) annealing temperature and (b) annealing time at 300 °C in N2 ambient.

Image of FIG. 2.
FIG. 2.

(Color online) SIMS depth profiles of Ti/Al and Ti/W/Al contacts before and after annealing. Both contacts were annealed at 300 °C for 60 min in N2 atmosphere. Corresponding SEM micrographs of annealed Ti/Al and Ti/W/Al contacts are shown in the inset. The scale bars denote 500 nm.

Image of FIG. 3.
FIG. 3.

(Color online) XRD θ-2θ profiles for (a) Ti/Al and (b) Ti/W/Al contacts before and after annealing at 300 °C for 60 min. Cross-sectional TEM micrographs of annealed Ti/Al sample: (c) low magnitude and (d) focused on AlN/n-GaN interface. (e) Fourier-filtered image of (d) obtained by masking AlN (002) patterns.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic energy band diagrams of (a) Ti/Al and (b) Ti/W/Al contacts before and after annealing at 300 °C for 60 min.

Loading

Article metrics loading...

/content/aip/journal/apl/99/23/10.1063/1.3665623
2011-12-05
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of W diffusion barrier on inhibition of AlN formation in Ti/W/Al ohmic contacts on N-face n-GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665623
10.1063/1.3665623
SEARCH_EXPAND_ITEM