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(Color online) Contact resistivities as a function of (a) annealing temperature and (b) annealing time at 300 °C in N2 ambient.
(Color online) SIMS depth profiles of Ti/Al and Ti/W/Al contacts before and after annealing. Both contacts were annealed at 300 °C for 60 min in N2 atmosphere. Corresponding SEM micrographs of annealed Ti/Al and Ti/W/Al contacts are shown in the inset. The scale bars denote 500 nm.
(Color online) XRD θ-2θ profiles for (a) Ti/Al and (b) Ti/W/Al contacts before and after annealing at 300 °C for 60 min. Cross-sectional TEM micrographs of annealed Ti/Al sample: (c) low magnitude and (d) focused on AlN/n-GaN interface. (e) Fourier-filtered image of (d) obtained by masking AlN (002) patterns.
(Color online) Schematic energy band diagrams of (a) Ti/Al and (b) Ti/W/Al contacts before and after annealing at 300 °C for 60 min.
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