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Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode
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10.1063/1.3665628
/content/aip/journal/apl/99/23/10.1063/1.3665628
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665628
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Characteristics of (a) Ig and (b) Id fluctuation in the time domain and (c) the power spectrum density of Id fluctuation in the frequency domain (sample 1).

Image of FIG. 2.
FIG. 2.

Ig fluctuation (sample 1) with respect to (a) Vds and (b) Vsd at the Vg of 0.9 V.

Image of FIG. 3.
FIG. 3.

(Color online) The average time constants with respect to (a) gate bias and (b) drain bias or source bias (sample 1). The times for high and low current levels are assumed to be capture time and emission time, respectively, because each trapped electron in oxide during emission time blocks the current conduction through the gate dielectric.

Image of FIG. 4.
FIG. 4.

Dependence of (a) Ig and (b) Id fluctuation (sample 2) on several bias conditions.

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/content/aip/journal/apl/99/23/10.1063/1.3665628
2011-12-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665628
10.1063/1.3665628
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