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Characteristics of (a) Ig and (b) Id fluctuation in the time domain and (c) the power spectrum density of Id fluctuation in the frequency domain (sample 1).
Ig fluctuation (sample 1) with respect to (a) Vds and (b) Vsd at the Vg of 0.9 V.
(Color online) The average time constants with respect to (a) gate bias and (b) drain bias or source bias (sample 1). The times for high and low current levels are assumed to be capture time and emission time, respectively, because each trapped electron in oxide during emission time blocks the current conduction through the gate dielectric.
Dependence of (a) Ig and (b) Id fluctuation (sample 2) on several bias conditions.
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