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Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures
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10.1063/1.3665630
/content/aip/journal/apl/99/23/10.1063/1.3665630
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665630
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) A schematic cross section of beveled oxide samples, showing the “SAM” sample and the bare reference sample (not to scale).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Flat band voltage vs. oxide thickness relations of the SAM and bare reference before and after anneal; (b) Summary of the effective work function values extracted from (a).

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of the Si 2p spectra of SAM and bare samples with a thin (∼4 nm) Al layer. The intensities were adjusted so that the Si-O peaks are vertically similar for clarity. Inset shows a comparison of the SAM spectra from a thin Al sample to that acquired from the SiO2 beneath a delaminated capacitor.

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/content/aip/journal/apl/99/23/10.1063/1.3665630
2011-12-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665630
10.1063/1.3665630
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