NOTICE: Scitation Maintenance Tuesday, May 5, 2015

Scitation will be unavailable on Tuesday, May 5, 2015 between 3:00 AM and 4:00 AM EST due to planned network maintenance.

Thank you for your patience during this process.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. J. J. Kim, B. Cho, K. S. Kim, T. Lee, and G. Y. Jung, Adv. Mater. 23, 2104 (2011).
2. J. C. Scott and L. D. Bozano, Adv. Mater. 19, 1452 (2007).
3. D. Prime and S. Paul, Philos. Trans. R. Soc. London, Ser. A 367, 4141 (2009).
4. Y. Ji, S. Lee, B. Cho, S. Song, and T. Lee, ACS Nano 5, 5995 (2011).
5. M. A. Mamo, W. S. Machado, W. A. L. van Otterlo, and N. J. Coville, Org. Electron. 11, 1858 (2010).
6. J. Leppaniemi, M. Aronniemi, T. Mattila, A. Alastalo, M. Allen, and H. Seppa, IEEE Trans. Electron Devices 58, 151 (2011).
7. K. H. Park, J. H. Jung, F. Li, D. I. Son, and T. W. Kim, Appl. Phys. Lett. 93, 123104 (2008).
8. D. I. Son, C. H. You, W. T. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett. 94, 132103 (2009).
9. Z. L. Tseng, P. C. Kao, M. F. Shih, H. H. Huang, J. Y. Wang, and S. Y. Chu, Appl. Phys. Lett. 97, 212103 (2010).
10. F. Verbakel, S. C. J. Meskers, and R. A. J. Janssen, J. Appl. Phys. 102, 083701 (2007).
11. D. Y. Yun, J. K. Kwak, J. H. Jung, T. W. Kim, and D. I. Son, Appl. Phys. Lett. 95, 143301 (2009).
12. H. Zhang, L. Liu, B. Gao, Y. Qiu, Z. Liu, J. Lu, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 98, 042105 (2011).
13. T. V. Thu and S. Maenosono, J. Appl. Phys. 107, 014308 (2010).
14.See supplementary material at for ZnO NP synthesis, emission image microscopy, cross-sectional TEM measurement method, STEM-HAADF images EDS data, and a histogram of Vth. [Supplementary Material]
15. T.-S. Huang, Y.-K. Su, and P.-C. Wang, Appl. Phys. Lett. 91, 092116 (2007).
16. B. Cho, T.-W. Kim, M. Choe, G. Wang, S. Song, and T. Lee, Org. Electron. 10, 473 (2009).
17. M. Colle, M. Buchel, and D. M. de Leeuw, Org. Electron. 7, 305 (2006).
18. H.-T. Lin, C.-Y. Lin, Z. Pei, J.-R. Chen, Y.-J. Chan, Y.-H. Yeh, and C.-C. Wu, Org. Electron. 12, 1632 (2011).
19. Y. Luo and N. Miura, in Proc. ASID 2004: Proceedings of the 8th Asian Symposium on Information Display, Nanjing, China, Society for Information Display, USA, February 15-17, 2004, pp. 485-488.
20. C.-Y. Lee, Y.-T. Haung, W.-F. Su, and C.-F. Lin, Appl. Phys. Lett. 89, 231116 (2009).
21. Y. Kinoshita, T. Hasobe, and H. Murata, Appl. Phys. Lett. 91, 083518 (2007).

Data & Media loading...


Article metrics loading...



A mixture of ZnOnanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistivememory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 104, retention time of >105 s, and number of readout of >4 × 104 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.


Full text loading...

This is a required field
Please enter a valid email address

Oops! This section, does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate