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High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate
12. H. Zhang, L. Liu, B. Gao, Y. Qiu, Z. Liu, J. Lu, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 98, 042105 (2011).
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A mixture of ZnOnanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistivememory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 104, retention time of >105 s, and number of readout of >4 × 104 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.
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