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(Color online) Coordinate system for the transverse configuration. The stress (σ) is applied at 90° of the preferential magnetization direction (EA for easy axis and PD for pinned direction). The spontaneous magnetization (M) makes an angle (Φ) with the preferential magnetization direction.
(Color online) Schematic view of the AF/F/PE composite. The AF/F stack consists in Ta(5 nm)/Cu(3 nm)/IrMn10(nm)/CoFeB(50 nm) deposited on 50 μm-thick corning glass. The AF/F stack is glued face-down on the top of P1-type MFC commercial piezoelectric substrate using the d 33 mode horizontally (horizontal arrows). Interdigital electrodes for in-plane E-field polarization are shown.
(Color online) In-plane E-field dependences of normalized magnetic hysteresis loops parallel (a) and perpendicular (b) to the PD of the AF/F/PE composite for the transverse configuration (M vector is initially along PD).
(Color online) Angular dependence of exchange bias field (Hex ) for the transverse configuration (stress σ is applied at 90° from PD) as a function of E-field.
(Color online) Angular dependence of exchange bias field (Hex ) for the 45° configuration (stress σ is applied at 45° from PD) as a function of E-field.
(Color online) In-plane normalized magnetic hysteresis loops measured perpendicular to the PD for the 45° configuration showing near 180° magnetization rotation with E-field.
Material parameters used for numerical calculations of the critical electric field Ec * (* applies to F and AF/F).
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