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Silicon two-dimensional phononic crystal resonators using alternate defects
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10.1063/1.3665956
/content/aip/journal/apl/99/23/10.1063/1.3665956
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665956
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) SEM image of microfabricated PnC resonator with alternate defects.

Image of FIG. 2.
FIG. 2.

Measured transmission spectra of PnC resonators with alternate defects and with (a) r′ = 2 μm (b) r′ = 4 μm (c) r′ = 6 μm (d) r′ = 8 μm. f, Q, IL refer to the resonant frequency, the Q factor, and the insertion loss of the PnC resonator, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Simulated mode profiles of displacement of PnC resonators with alternate defects and with (a) r′ = 2 μm (b) r′ = 4 μm (c) r′ = 6 μm (d) r′ = 8 μm. The u1, u2, and u3 represent the displacement vector components in x, y, and z directions, respectively. The color bar indicates the amplitude of displacements in an arbitrary unit.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Simulated mode profiles of displacement of the Fabry-Perot resonator. (b) Measured transmission spectrum of the Fabry-Perot resonator.

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/content/aip/journal/apl/99/23/10.1063/1.3665956
2011-12-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon two-dimensional phononic crystal resonators using alternate defects
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3665956
10.1063/1.3665956
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