Full text loading...
SEM images of ZnSe1− x Te x nanowires with (a) x = 0.10 and (b) x = 0.19. The wires had no preferred registration to the growth substrate. High-resolution TEM images and the corresponding FFTs (inset) of the nanowires with (c) x = 0.10 and (d) x = 0.19. The orientation of the long axis is indicated by the arrow and the corresponding lattice spacing is given in nanometers. Micrographs for x = 0.55 can be found in the supplementary material.18
(Color online) XRD from as-grown ZnSe 1−x Te x nanowires. (a) Zincblende lattice parameter, a (Å), determined from XRD, graphed as a function of Te fraction, x, as measured by EDX. (b) XRD spectra in decreasing Te fraction, ZnTe to ZnSe, from top to bottom. The zincblende peaks shift linearly to larger angles for decreasing Te content, following Vegard’s law.
(Color online) (left) Photoluminescence response from as-grown ZnSe1− x Te x nanowires, taken at room-temperature. (right) Near-band-edge peak energy plotted as a function of Te fraction, x. The bandgap bowing as predicted by the BAC model is shown20 (solid curve), which contrasts with the linear interpolation in well-matched alloys (dotted line).
Article metrics loading...