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Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of a double dot identical to the one used in the experiment. The transition measured here is between the left dot (white circle) and the left reservoir. (b) Stability diagram of the double dot with effective electron occupation numbers labeled. The white symbols between regions (1,0) and (2,0) correspond to the gate voltages for the data reported below in Fig. 3. The line between (1,0) and (1,1) is invisible because of a slow tunnel rate.

Image of FIG. 2.
FIG. 2.

(Color online) (a) and (b) Ground state spectroscopy for two different sets of gate voltages chosen so that the gate voltages for (b) favor a dot position farther to the right than those for (a) (see Fig. 3). The plots show the QPC conductance G. The arrows indicate the magnetic field B ST at which the Zeeman shift for the T equals the zero-field E ST. (c) Diagram showing the transition as a function of B. (d) Excited state spectroscopy using pulsed-gate voltages for the dot position corresponding to (b). (e) Simulated spectroscopy for the data in panel (d).

Image of FIG. 3.
FIG. 3.

(Color online) B ST, the magnetic field at which the ground state shifts from S to T, for different sets of V L and V R, corresponding to the symbols on the stability diagram in Fig. 1(b). Error bars are determined by the uncertainty in linear fits to lines like those in Figs. 2(a) and 2(b). The three lines show fits with different sets of microscopic parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot