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Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-sectional TEM of the interface shows that the misfit dislocation spacing is approximately 5.6 nm. The arrow represents the growth direction.

Image of FIG. 2.
FIG. 2.

(Color online) Scans of a 1 μm GaSb IMF buffer. (a) RSM of GaSb 224 RLP. The angle (ϕ) of the FWHM is 34.9°. (b) Bragg scan of GaAs and GaSb 004 RLPs using a triple crystal geometry. The separation between the peaks is −9615 arcsec, and the FWHM is 67 arcsec Inset shows the rocking curve of the GaSb 004 peak. The FWHM is 240 arcsec.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Measured relaxation of the GaSb epilayer with increased growth, as well as change in the FWHM of the GaSb 004 peak in reciprocal units. (b) Both the angle of the 224 RLP and the ratio between ΔQz and ΔQx change with respect to GaSb thickness. The expected values for 90° dislocations are 38° and 0.71, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) FWHM of both ΔQz and ΔQx versus epilayer thickness. Solid lines between measured datapoints are best-fit curves based on a d−0.5 relationship. Theory are visual guides for uncorrelated 90° dislocations, demonstrating that the IMF dislocations are highly correlated.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction