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Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors
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FIG. 1.

(Color) (a) Micrograph (left) and schematic cross-section (right) of a single-crystal p-type rubrene transistor. (b) Output characteristics of a rubrene transistor using Au/MoO3 electrodes. The solid blue and red circles indicate the pinch-off points found by curve derivation and visual estimation, respectively. (c) and (d) Channel-length dependence of the total resistance derived by the linear-region TLM and the saturation-region TLM at different gate voltages. (e) Gate-voltage dependence of the contact resistance derived by the linear-region TLM (blue) and the saturation-region TLM (red).

Image of FIG. 2.

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FIG. 2.

(Color) (a) Output characteristics of a rubrene transistor using Ca electrodes. The blue and red filled circles are the pinch-off points found by curve derivation and visual estimation, respectively. Inset: Schematic representation of a single-crystal n-type rubrene transistor. (b) Channel-length dependence of the total resistance derived by the saturation-region TLM at different gate voltages. (c) Gate-voltage dependence of the contact resistance derived by the saturation-region TLM.

Image of FIG. 3.

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FIG. 3.

(Color) (a) Normal transfer characteristics of an n-type rubrene transistor (L = 100 μm) in the saturation region. (b) Transfer characteristics without the effect of contact resistance in the saturation region (L = 100 μm). (c) Channel-length dependence of the electron mobilities with (red circles) and without (blue triangles) the effect of contact resistance.

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/content/aip/journal/apl/99/23/10.1063/1.3666236
2011-12-05
2014-04-16

Abstract

A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current–voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystaltransistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.

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Scitation: Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3666236
10.1063/1.3666236
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