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Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors
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/content/aip/journal/apl/99/23/10.1063/1.3666236
2011-12-05
2014-09-02

Abstract

A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current–voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystaltransistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.

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Scitation: Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3666236
10.1063/1.3666236
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