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Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors
1. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Bredas, M. Logdlund, and W. R. Salaneck, Nature 397, 121 (1999).
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18. M. Yamagishi, J. Takeya, Y. Tominari, Y. Nakazawa, T. Kuroda, S. Ikehata, M. Uno, T. Nishikawa, and T. Kawase, Appl. Phys. Lett. 90, 182117 (2007).
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A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current–voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystaltransistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.
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