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Demonstration of forward inter-band tunneling in GaN by polarization engineering
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10.1063/1.3666862
/content/aip/journal/apl/99/23/10.1063/1.3666862
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3666862
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Equilibrium energy band diagram and charge profile of n-GaN/In0.4Ga0.7 N/p-GaN inter-band tunnel junction. Charge profile shows the presence of degenerate carrier gases at GaN/InGaN interface. Inset: band diagram at low forward bias showing forward inter-band tunneling. (b) Epitaxial stack of GaN/InGaN/GaN inter-band tunnel junction showing forward tunneling characteristics.

Image of FIG. 2.
FIG. 2.

(Color online) Linear J-V characteristics of (a) sample A with t > tcr designed for forward tunneling. (b) Sample B with t < tcr showing no forward tunneling. (c) Comparison of log J-V characteristics of samples A and B.

Image of FIG. 3.
FIG. 3.

(Color online) Log J-V characteristics of the GaN/In0.4Ga0.7 N/GaN TJ showing hysteresis with respect to sweep direction. Negative differential resistance is reproducible with hysteresis. High current density close to zero bias is repeatable without any hysteresis when the peak current voltage is not exceeded in forward sweep.

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/content/aip/journal/apl/99/23/10.1063/1.3666862
2011-12-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of forward inter-band tunneling in GaN by polarization engineering
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3666862
10.1063/1.3666862
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