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(Color online) Polarized RT PL spectra of m-plane InGaN/GaN MQWs. Inset: PL band position (1) and normalized PL efficiency (2) versus In content.
(Color online) Polarized spectra of hν·ηPC 2 of the MQWs. Inset: ΔEPC as a function of In content (the solid curve is a guide to the eye).
(Color online) DOP and ΔE of PL emission from m-plane InGaN/GaN MQWs as a function of temperature at N2-laser excitation. Inset: normalized LT polarized PL spectra of MQW with xIn = 30% at λexc = 405 nm.
(Color online) Schematic diagram of potential distribution of inhomogeneously composed InGaN. Accumulated carriers are visualized by grey areas.
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