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Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2
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10.1063/1.3667199
/content/aip/journal/apl/99/23/10.1063/1.3667199
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3667199
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Polarized RT PL spectra of m-plane InGaN/GaN MQWs. Inset: PL band position (1) and normalized PL efficiency (2) versus In content.

Image of FIG. 2.
FIG. 2.

(Color online) Polarized spectra of hν·ηPC 2 of the MQWs. Inset: ΔEPC as a function of In content (the solid curve is a guide to the eye).

Image of FIG. 3.
FIG. 3.

(Color online) DOP and ΔE of PL emission from m-plane InGaN/GaN MQWs as a function of temperature at N2-laser excitation. Inset: normalized LT polarized PL spectra of MQW with xIn  = 30% at λexc = 405 nm.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagram of potential distribution of inhomogeneously composed InGaN. Accumulated carriers are visualized by grey areas.

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/content/aip/journal/apl/99/23/10.1063/1.3667199
2011-12-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3667199
10.1063/1.3667199
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