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High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer
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1.
1. A. L. Briseno, S. C. B. Mannsfeld, S. A. Jenekhe, Z. Bao, and Y. Xia, Mater. Today 11, 38 (2008).
http://dx.doi.org/10.1016/S1369-7021(08)70055-5
2.
2. M. D. Curtis, J. Cao, and J. W. Kampf, J. Am. Chem. Soc. 126, 4318 (2004).
http://dx.doi.org/10.1021/ja0397916
3.
3. R. J. Tseng, R. Chan, V. C. Tung, and Y. Yang, Adv. Mater. 20, 435 (2008).
http://dx.doi.org/10.1002/adma.v20:3
4.
4. S. Berson, R. D. Bettignies, S. Bailly, and S. Guillerez, Adv. Funct. Mater. 17, 1377 (2007).
http://dx.doi.org/10.1002/adfm.v17:8
5.
5. J. P. Hong, M. C. Um, S. R. Nam, J. I. Hong, and S. Lee, Chem. Commun. 310 (2009).
http://dx.doi.org/10.1039/b816030a
6.
6. A. L. Briseno, S. C. B. Mannsfeld, M. M. Ling, S. Liu, R. J. Tseng, C. Reese, M. E. Roberts, Y. Yang, F. Wudl, and Z. Bao, Nature 444, 913 (2006).
http://dx.doi.org/10.1038/nature05427
7.
7. D. H. Kim, J. T. Han, Y. D. Park, Y. Jang, J. H. Cho, M. Hwang, and K. Cho, Adv. Mater. 18, 719 (2006).
http://dx.doi.org/10.1002/adma.v18:6
8.
8. J. I. Lee, S. H. Cho, S. M. Park, J. K. Kim, J. K. Kim, J. W. Yu, Y. C. Kim, and T. P. Russell, Nano Lett. 8, 2315 (2008).
http://dx.doi.org/10.1021/nl801105s
9.
9. J. S. Kim, Y. Park, D. Y. Lee, J. H. Lee, J. H. Park, J. K. Kim, and K. Cho, Adv. Funct. Mater. 20, 540 (2010).
http://dx.doi.org/10.1002/adfm.200901760
10.
10. K. M. Coakley, B. S. Srinivasan, J. M. Ziebarth, C. Goh, Y. Liu, and M. D. McGehee, Adv. Funct. Mater. 15, 1927 (2005).
http://dx.doi.org/10.1002/adfm.v15:12
11.
11. M. Aryal, K. Trivedi, and W. Hu, ACS Nano 3, 3085 (2009).
http://dx.doi.org/10.1021/nn900831m
12.
12. Y. C. Chao, Y. C. Lin, M. Z. Dai, H. W. Zan, and H. F. Meng, Appl. Phys. Lett. 95, 203305 (2009).
http://dx.doi.org/10.1063/1.3261749
13.
13. Y. C. Chao, M. C. Ku, W. W. Tsai, H. W. Zan, H. F. Meng, and H. K. Tsai, Appl. Phys. Lett. 97, 223307 (2010).
http://dx.doi.org/10.1063/1.3513334
14.
14. Y. C. Chao, M. C. Niu, H. W. Zan, H. F. Meng, and M. C. Ku, Org. Electron. 12, 78 (2011).
http://dx.doi.org/10.1016/j.orgel.2010.09.023
15.
15. Y. C. Chao, C. Y. Chen, H. W. Zan, and H. F. Meng, J. Phys. D: Appl. Phys. 43, 205101 (2010).
http://dx.doi.org/10.1088/0022-3727/43/20/205101
16.
16. S. Hoshino, M. Yoshida, S. Uemura, T. Kodzasa, N. Takada, T. Kamata, and K. Yase, J. Appl. Phys. 95, 5088 (2004).
http://dx.doi.org/10.1063/1.1691190
17.
17. B. S. Ong, Y. Wu, P. Liu, and S. Gardner, J. Am. Chem. Soc. 126, 3378 (2004).
http://dx.doi.org/10.1021/ja039772w
18.
18. S. Wang, J. C. Tang, L. H. Zhao, R. Q. Png, L. Y. Wong, P. J. Chia, H. S. O. Chan, P. K.-H. Ho, and L. L. Chua, Appl. Phys. Lett. 92, 162103 (2008).
http://dx.doi.org/10.1063/1.3001574
19.
19. B. S. Ong, Y. Wu, P. Liu, and S. Gardner, Adv. Mater. 17, 1141 (2005).
http://dx.doi.org/10.1002/adma.v17:9
20.
20. J. E. Parmer, A. C. Mayer, B. E. Hardin, S. R. Scully, M. D. McGehee, M. Heeney, and I. McCulloch, Appl. Phys. Lett. 92, 113309 (2008).
http://dx.doi.org/10.1063/1.2899996
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/content/aip/journal/apl/99/23/10.1063/1.3668086
2011-12-09
2014-12-25

Abstract

A vertical polymernanorodtransistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 104, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

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Scitation: High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3668086
10.1063/1.3668086
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