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(Color online) Drift velocities vs. electric field for graphene on different substrates. The graphene sample is assumed to be 1 μm × 0.5 μm with a carrier density of 1 × 1012 cm−2. The impurity density is 5 × 1011 cm−2. As shown, Joule heating leads to a significant velocity degradation for use of SiO2 substrate.
(Color online) (a) Graphene lattice temperature Tg and (b) temperature difference Tg –Ts between the graphene lattice and the top surface of the substrate as a function of driving electric field. The conditions are the same as in Fig. 1.
(Color online) Saturation velocity vsat vs. electron density in graphene on different substrates. In the calculations, it is assumed that the graphene film of 1 μm × 1 μm is under an electric field of 30 kV/cm. The impurity density is 5 × 1011 cm−2. The experimental data for the case of SiO2 substrate are from Refs. 3 and 4.
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