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Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
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10.1063/1.3669402
/content/aip/journal/apl/99/23/10.1063/1.3669402
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669402
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Sheet resistance as a function of temperature for GdTiO3/SrTiO3/LSAT structures with varying SrTiO3 thicknesses, indicated by the labels. The GdTiO3 film grown directly on LSAT is labeled “0 nm.” (b) Sheet carrier density and mobility at room temperature and 2.5 K.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Room temperature sheet carrier concentrations of SrTiO3/GdTiO3/SrTiO3 multilayers as a function of multilayer repeats (x). The dashed line indicates the expected sheet carrier concentration scaling with number of repeats as calculated from the x = 1 sample. (b) High-angle annular dark-field scanning transmission electron microscopy image of the x = 20 multilayer.

Image of FIG. 3.
FIG. 3.

(Color online) Calculated (a) charge distribution and (b) band alignment for a SrTiO3/GdTiO3/SrTiO3 heterostructure. The Fermi level is shown as a dotted line.

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/content/aip/journal/apl/99/23/10.1063/1.3669402
2011-12-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669402
10.1063/1.3669402
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