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Low-field mobility in ultrathin silicon nanowire junctionless transistors
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10.1063/1.3669509
/content/aip/journal/apl/99/23/10.1063/1.3669509
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669509
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematical representation of the junctionless nanowire transistor

Image of FIG. 2.
FIG. 2.

(Color online) Phonon limited mobility as a function of gate voltage for N D = 1020 cm−3 (red) and N D = 5 × 1019 cm−3 (blue) and wire radii R = 2,3,4, and 5 nm.

Image of FIG. 3.
FIG. 3.

(Color online) Surface roughness limited mobility as a function of gate voltage for N D = 1020 cm−3 (red) and N D = 5 × 1019 cm−3 (blue) and wire radii R = 2,3,4, and 5 nm.

Image of FIG. 4.
FIG. 4.

(Color online) Ionized impurity limited mobility as a function of gate voltage for N D = 1020 cm−3 (red) and N D = 5 × 1019 cm−3 (blue) and wire radii R = 2,3,4 and 5 nm.

Image of FIG. 5.
FIG. 5.

(Color online) Total mobility as a function of gate voltage for N D = 1020 cm−3 (red) and N D = 5 × 1019 cm−3 (blue) and wire radii R = 2,3,4 and 5 nm.

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/content/aip/journal/apl/99/23/10.1063/1.3669509
2011-12-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-field mobility in ultrathin silicon nanowire junctionless transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669509
10.1063/1.3669509
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