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(Color online) Terahertz transmittance of an undoped InN film and four Mg doped InN films with different carrier densities. While that of the undoped film is about 0.2, terahertz transmittance of Mg doped InN films is in the range of 0.65–0.7, nearly independent on the carrier density.
(Color online) Complex refractive index (a) and conductivity (b) of the undoped- and Mg-doped InN (sample A) films. Refractive index and conductivity of sample A are much smaller than those of the undoped film.
(Color online) Frequency dependence of the complex conductivity of Mg-doped InN films grown at different Mg doping levels. The small conductivities of the Mg-doped InN films are mainly due to the reduction of the carrier scattering time as shown in Table I.
(Color online) Electron-density-dependent electron mobility measured by the THz-TDS and the Hall-effect method. Open circles are THz-TDS-measured mobility corrected by including a compensation ratio θ = 0.2.
Extracted parameters for best fits in Figs. 2 and 3 compared to those obtained from Hall effect measurement.
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