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Contact effects in high performance fully printed p-channel organic thin film transistors
13. A. Daami, C. Bory, M. Benwadih, S. Jacob, R. Gwoziecki, I. Chartier, R. Coppard, C. Serbutoviez, L. Maddiona, E. Fontana, and A. Scuderi., in ISSCC Dig. Tech. Papers (IEEE-SSCS. Piscataway, USA, 2011), pp. 328–330.
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Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effectmobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length <200 μm, are seriously influenced by contact effects with an anomalous increase of the contact resistance for increasing source-drain voltage. Assuming that contact effects are negligible in long channel transistors and using gradual channel approximation, we evaluated the current-voltage characteristics of the injection contact, showing that I-V characteristics can be modeled as a reverse biased Schottky diode, including barrier lowering induced by the Schottkyeffect.
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