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Contact effects in high performance fully printed p-channel organic thin film transistors
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/content/aip/journal/apl/99/23/10.1063/1.3669701
2011-12-09
2014-10-20

Abstract

Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effectmobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length <200 μm, are seriously influenced by contact effects with an anomalous increase of the contact resistance for increasing source-drain voltage. Assuming that contact effects are negligible in long channel transistors and using gradual channel approximation, we evaluated the current-voltage characteristics of the injection contact, showing that I-V characteristics can be modeled as a reverse biased Schottky diode, including barrier lowering induced by the Schottkyeffect.

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Scitation: Contact effects in high performance fully printed p-channel organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669701
10.1063/1.3669701
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