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Contact effects in high performance fully printed p-channel organic thin film transistors
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Image of FIG. 1.

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FIG. 1.

(Color online) Normalized transfer characteristics of long (L = 200 μm, dashed lines) and short (L = 10 μm, solid lines) channel OTFTs measured at different drain voltages.

Image of FIG. 2.

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FIG. 2.

(Color online) Experimental output characteristics (symbols), measured at different gate voltages, of OTFTs with three different channel lengths. Lines show the theoretical output characteristics calculated by using the gradual channel approximation.

Image of FIG. 3.

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FIG. 3.

(Color online) Current voltage characteristics of the source contact, evaluated for different gate voltages, of an OTFT with L = 10 μm (symbols) and corresponding fits calculated by using Eq. (3) (lines). Inset shows the diode reverse current, I0, as a function of gate voltages for devices with different L.

Image of FIG. 4.

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FIG. 4.

(Color online) (a) Contact resistance, Rs (dashed lines), evaluated at different Vds, and channel resistance, Rch (solid line), vs gate voltage of an OTFTs with L = 10 μm. (b) Contact resistance (dashed lines) and channel resistance (solid lines), calculated for a fixed Vds (−10 V) and different Vgs, as a function of L.

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/content/aip/journal/apl/99/23/10.1063/1.3669701
2011-12-09
2014-04-19

Abstract

Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effectmobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length <200 μm, are seriously influenced by contact effects with an anomalous increase of the contact resistance for increasing source-drain voltage. Assuming that contact effects are negligible in long channel transistors and using gradual channel approximation, we evaluated the current-voltage characteristics of the injection contact, showing that I-V characteristics can be modeled as a reverse biased Schottky diode, including barrier lowering induced by the Schottkyeffect.

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Scitation: Contact effects in high performance fully printed p-channel organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/23/10.1063/1.3669701
10.1063/1.3669701
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