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Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
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10.1063/1.3670321
/content/aip/journal/apl/99/24/10.1063/1.3670321
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/24/10.1063/1.3670321
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic view of the double-grating-gate FET structure with an asymmetric unit cell. External THz wave is incident normally from the top.

Image of FIG. 2.
FIG. 2.

(Color online) Calculated responsivity of the A-DGG-FET detector as a function of THz frequency and the asymmetry factor, s 1/s 2, for and U 2 = 0. Parameters of the DGG are L = 1300 nm, w 1 = 600 nm, w 2 = 500 nm. Black triangles at the ordinate axis mark the frequencies of the fundamental (n = 1) and the second-order (n = 2) plasmon modes calculated by Eq. (1) for w eff = w 2 + 100 nm.

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/content/aip/journal/apl/99/24/10.1063/1.3670321
2011-12-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/24/10.1063/1.3670321
10.1063/1.3670321
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