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Metal-oxide-oxide-metal granular tunnel diodes fabricated by anodization
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10.1063/1.3670057
/content/aip/journal/apl/99/25/10.1063/1.3670057
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3670057
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) I-V characteristics of the Ta-Al MO-OM junction at T = 300 K. Inset is the schematic of the MO-OM junction. Two different granular metal-oxide films are indicated by different colors. (b) Plot of dI/dV vs. V calculated from the I-V data in (a). The threshold voltages are 0.19 V and −1.03 V. (c) I-V curves of the Ta-Al MO-OM junction at selected temperatures. (d) Plot of threshold voltage (Vth ) vs. T of the Ta-Al MO-OM junction under forward bias (black) and reverse bias (red).

Image of FIG. 2.
FIG. 2.

Plane-view bright field TEM image of an anodized Ta thin film with thickness of 5 nm. The Ta grains are indicated by the white curves. The amorphous area is Ta oxide. Scale bar is 2 nm.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Experimental (points) and calculated (line) I-V curve of the Ta-Al MO-OM junction at T = 300 K. Fitting results of barrier height (ϕB ), thickness of oxide (d), and tunneling area (A) are shown in the plot. (b) Energy band diagrams for the Ta-Al MO-OM junction under thermal equilibrium (V = 0), forward bias (V > 0), and reverse bias (V < 0) conditions. The dash rectangular potential barriers in the band diagram of V = 0 represents the effective Ta and Al tunneling barriers. Black dots are electrons.

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/content/aip/journal/apl/99/25/10.1063/1.3670057
2011-12-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-oxide-oxide-metal granular tunnel diodes fabricated by anodization
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3670057
10.1063/1.3670057
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