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Observed Raman spectra of Al x Ga1− x N samples. Asterisks and diamond denote signals due to sapphire substrate and a disorder mode, respectively. Carrier density n deduced from Hall measurement is shown for each sample.
Detailed Raman spectra for the LO-phonon region. Arrows denote LO (or LOPC) peak of Al x Ga1− x N layer. Dashed curves show best-fit profiles to the LO (or LOPC) peak.
L+-mode frequency vs. carrier density in Al x Ga1− x N for x = 0.67 calculated with m */m 0 = 0.28, Γ = 12 cm−1, and different values of γ. The inset shows L+ and L− mode behavior for γ = Γ = 0.
List of Al x Ga1− x N samples showing Al molar fraction x, carrier density n, and mobility μ. Sample #A is undoped.
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