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(Color online) Schematic of the energy band diagram for devices having a cascaded potential barrier at (a) zero, (b) forward, and (c) reverse bias. Here M1 and M2 are the electrodes of two sides of the device, d1 and d2 are the oxide thickness of the two insulators, and ϕ1 and ϕ2 are potential barrier heights formed at the interface of M1 and M2 with their corresponding insulators, respectively.
(Color online) Schematic of (a) the layout of the MIIM device and (b) the energy band diagram. Here, I1, and I2 are the insulating layers corresponding to Al2O3 and HfO2 layers, respectively. Φb1 and Φb2 are the potential barrier for Al2O3 and HfO2 layers, respectively.
(Color online) Current versus volatge characteristic curves for (a) the Cr/Al2O3-HfO2/Cr and (b) the Cr/HfO2/Cr and Cr/Al2O3/Cr devices. The data for Al2O3 was magnified 10 times for illustrative purpose. The higher tunneling current observed from the Cr-HfO2-Cr diode is attributed to the lower barrier height associated with HfO2 compared to that of Al2O3. The insets depict the logarithm of the current versus the voltage for each device.
(Color online) Plots of (a) asymmetry, (b) nonlinearity, and (c) curvature coefficient of the Cr/Al2O3/Cr, Cr/Al2O3/Cr, and Cr/Al2O3/Cr devices.
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