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Enhanced rectifying response from metal-insulator-insulator-metal junctions
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10.1063/1.3671071
/content/aip/journal/apl/99/25/10.1063/1.3671071
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671071
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the energy band diagram for devices having a cascaded potential barrier at (a) zero, (b) forward, and (c) reverse bias. Here M1 and M2 are the electrodes of two sides of the device, d1 and d2 are the oxide thickness of the two insulators, and ϕ1 and ϕ2 are potential barrier heights formed at the interface of M1 and M2 with their corresponding insulators, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic of (a) the layout of the MIIM device and (b) the energy band diagram. Here, I1, and I2 are the insulating layers corresponding to Al2O3 and HfO2 layers, respectively. Φb1 and Φb2 are the potential barrier for Al2O3 and HfO2 layers, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Current versus volatge characteristic curves for (a) the Cr/Al2O3-HfO2/Cr and (b) the Cr/HfO2/Cr and Cr/Al2O3/Cr devices. The data for Al2O3 was magnified 10 times for illustrative purpose. The higher tunneling current observed from the Cr-HfO2-Cr diode is attributed to the lower barrier height associated with HfO2 compared to that of Al2O3. The insets depict the logarithm of the current versus the voltage for each device.

Image of FIG. 4.
FIG. 4.

(Color online) Plots of (a) asymmetry, (b) nonlinearity, and (c) curvature coefficient of the Cr/Al2O3/Cr, Cr/Al2O3/Cr, and Cr/Al2O3/Cr devices.

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/content/aip/journal/apl/99/25/10.1063/1.3671071
2011-12-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced rectifying response from metal-insulator-insulator-metal junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671071
10.1063/1.3671071
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