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(Color online) Schematic device structure with a top-view and a cross-section view of the SLHJ UV-PD.
(Color online) (a) Incident light depended current-voltage (I-V) characteristics are measured at applied bias from −1 to 1 V and exposed to 365 nm UV-light irradiation with light intensities varied from 22.2 to 479 μW (0.113 to 2.440 mW/cm2). In addition, the individual dark I-V curve is inserted. (b) Incident light depended current-time (I-T) characteristics of the SLHJ-PD are measured at 0 V bias and exposed to 365 nm UV-light on/off switching irradiation with light intensities varied from 48 nW to 22.2 μW (0.244 μW/cm2 to 0.113 mW/cm2). The dark current is about 23 pA on average. (c) Photocurrent (square) and photosensitivity (triangle) versus incident light intensity plots of the SLHJ-PD are measured at 0 V bias, with 365 nm UV-light irradiation. The incident UV-light intensities are varied from 48 nW to 479 μW (0.244 μW/cm2 to 2.440 mW/cm2).
Photoresponse spectrum of the SLHJ UV-PD is measured at 0 V bias. The UV-visible transmittance spectra for an FTO-glass substrate (solid line) and 50-nm-thick TiO2 film coated on FTO-glass (dash line) sample are shown in the insert.
(Color online) Schematic energy band diagram and working principles for the SLHJ UV-PD.
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