1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/apl/99/25/10.1063/1.3671398
1.
1. D. R. Rhiger, J. Electron Mater. 40, 1815 (2011).
http://dx.doi.org/10.1007/s11664-011-1653-6
2.
2. G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, L. Shterengas, D. Wang, and Y. Lin, Proc. SPIE 8012, 80120W (2011).
http://dx.doi.org/10.1117/12.883625
3.
3. D. Donetsky, S. P. Svensson, L. E. Vorobjev, and G. Belenky, Appl. Phys. Lett. 95, 212104 (2009).
http://dx.doi.org/10.1063/1.3267103
4.
4. J. Pellegrino and R. DeWames, Proc. SPIE 7298, 72981U (2009).
http://dx.doi.org/10.1117/12.819641
5.
5. B. C. Connelly, G. D. Metcalfe, H. Shen, and M. Wraback, Appl. Phys. Lett. 97, 251117 (2010).
http://dx.doi.org/10.1063/1.3529458
6.
6. S. Bandara, P. Maloney, N. Baril, J. Pellegrino, and M. Tidrow, Infrared Phys. Technol. 54, 263 (2011).
http://dx.doi.org/10.1016/j.infrared.2010.12.026
7.
7. B. C. Connelly, G. D. Metcalfe, H. Shen, and M. Wraback, Proc. SPIE 8155, 81550L (2011).
http://dx.doi.org/10.1117/12.893964
8.
8. S. P. Svensson, D. Donetsky, D. Wang, P. Maloney, and G. Belenky, Proc. SPIE 7660, 76601V (2010).
9.
9. S. P. Svensson, D. Donetsky, D. Wang, H. Hier, F. J. Crowne, and G. Belenky, J. Cryst. Growth 334, 103 (2011).
http://dx.doi.org/10.1016/j.jcrysgro.2011.08.030
10.
10. S. Bandara, P. Maloney, N. Baril, J. Pellegrino, and M. Tidrow, Opt. Eng. 50, 061015 (2011).
http://dx.doi.org/10.1117/1.3590720
11.
11. Y.-H. Zhang, in Optoelectronic Properties of Semiconductors and Superlattices: Antimonide-Related Strained-Layer Heterostructures, edited by M. O. Manasreh (Gordon, Breach, 1997), Vol. 3, pp. 461500, and references therein.
12.
12. C. H. Grein, M. E. Flatte, and H. Ehrenreich, in Proceedings on the Third International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications III, Chicago, Illinois, 8-13 October 1995 (The Electrochemical Society, Inc., Pennington, NJ, 1995), p. 211.
13.
13. J. R. Dixon and J. M. Ellis, Phys. Rev. 123, 5 (1961).
http://dx.doi.org/10.1103/PhysRev.123.1560
14.
14. J. D. Vincent, Fundamentals of Infrared Detector Operation and Testing (Wiley, New York, 1990).
15.
15. R. K. Ahrenkiel, in Semiconductors and Semimetals, edited by R. K. Ahrenkiel and M. S. Lundstrom (Academic, New York, 1993), Vol. 39, pp. 39150.
16.
16. W. Walukiewicz, Proc. Mat. Res. Soc. Symp. 148, 137 (1989).
http://dx.doi.org/10.1557/PROC-148-137
17.
17. C. M. Ciesla, B. N. Murdin, C. R. Pidgeon, R. A. Stradling, C. C. Phillips, M. Livingstone, I. Galbraith, D. A. Jaroszynski, C. J. G. M. Langerak, P. J. P. Tang et al., J. Appl. Phys. 80, 2994 (1996).
http://dx.doi.org/10.1063/1.363157
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
Loading
/content/aip/journal/apl/99/25/10.1063/1.3671398
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/99/25/10.1063/1.3671398
2011-12-22
2015-04-18

Abstract

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga1−xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/99/25/1.3671398.html;jsessionid=77b2rmcur5ek1.x-aip-live-02?itemId=/content/aip/journal/apl/99/25/10.1063/1.3671398&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address

Oops! This section, does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
10.1063/1.3671398
SEARCH_EXPAND_ITEM