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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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10.1063/1.3671398
/content/aip/journal/apl/99/25/10.1063/1.3671398
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
/content/aip/journal/apl/99/25/10.1063/1.3671398
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/content/aip/journal/apl/99/25/10.1063/1.3671398
2011-12-22
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
10.1063/1.3671398
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