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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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10.1063/1.3671398
/content/aip/journal/apl/99/25/10.1063/1.3671398
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Time-resolved photoluminescence measurements on an InAs/InAs0.72Sb0.28 T2SL at 77 K for initial excess carrier densities ranging from 4.0 × 1015 to 1.0 × 1017 cm−3.

Image of FIG. 2.
FIG. 2.

(Color online) Combined temperature-dependent time-resolved photoluminescence decay measurements on the sample from Fig. 1.

Image of FIG. 3.
FIG. 3.

Carrier lifetimes extracted from the fits in Fig. 2 of the PL decay are shown as points as a function of 1000/T. Also plotted is the temperature dependence of the SRH lifetime (τ SRHT −1/2, dotted line), radiative lifetime (τ RadT 3/2, dashed line), and a combination of both SRH and radiative lifetimes (solid line).

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/content/aip/journal/apl/99/25/10.1063/1.3671398
2011-12-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/25/10.1063/1.3671398
10.1063/1.3671398
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