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(Color online) XRD 2θ/ω scan of the 30-period AlN/GaN short-period SLs. (a) Sample A with LGaN = 2.5 ML (0.64 nm) and LAlN = 7.1 ML (1.77 nm), (b) sample B with LGaN = 1.8 ML (0.48 nm) and LAlN = 7.3 ML (1.82 nm), and (c) sample C with LGaN = 0.9 ML (0.24 nm) and LAlN =7.2 ML (1.80 nm). X-ray wavelength is 0.154056 nm (Cukα1).
(Color online) (a) Cross-sectional TEM image of sample B and (b) its higher magnificaton. The image was taken along the 〈11-20〉 zone axis.
(Color online) (a) PL of the 30-period AlN/GaN short-period SLs with different GaN well thicknesses LGaN (samples A, B, and C). (b) Emission energy as a function of GaN well thickness. Solid circles are experimental data and the solid line is emission energy calculated using the Kronig-Penny model.
(Color online) PL of (a) the 30-period AlN/GaN short-period SL (sample C) and (b) the AlGaN alloy (7.5-nm-thick, Al composition = 78%). Solid and broken lines are data taken at radiation angles θ = 0° and θ = 45°, respectively.
(Color online) EL of the AlN/GaN short-period SL LED (sample D). The measurement was performed on-wafer at a DC forward current of 10 mA. Solid and broken lines are data taken at radiation angles θ = 0° and θ = 45°, respectively.
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