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(Color online) Structural information of materials and devices. HRTEM images of the samples with (a) Si3N4 barriers and (b) SiO2 barriers. The dark stripes are Si3N4 barriers. The light grey areas correspond to SiO2 and the dark grey “clouds” are Si NCs. (c) XRD patterns of the samples with Si3N4 barriers (upper curve) and SiO2 barriers (lower curve). (d) Schematic diagram of a Si NC/c-Si diode.
Raw and R s removed I-V characteristics of Si NC/c-Si diodes with (a) SiO2 barriers, R s ∼ 240 Ω; (b) Si3N4 barriers, R s ∼ 100 Ω.
(Color online) Normalized (a) electroluminescence and (b) photoluminescence spectra of Si NC/c-Si diodes with different barrier dielectrics (T ∼ 300 K).
(Color online) Electronic energy band diagram of a Si NC/c-Si LED operating under forward bias, showing four different radiative recombination routes within or near the heterojunction. The heterojunction is partially abrupt/graded after the 1100 °C anneal. The band bending in the depletion region has been exaggerated for better illustration.
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