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Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride
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29.The selection of the value of the bulk donor density at 1018 cm−3 is in accordance with the typical experimentally suggested value found in the literature (Ref. 21). Nevertheless, we also explicitly fixed the value of f to one electron being donated per dislocation defect site and varied the bulk donor concentration, Nd, from 1016 to 1019 cm−3. Only a slight dependence of the screening space charge concentration and electrostatic potential profiles on variations in the bulk donor concentration, Nd, was observed.
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