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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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10.1063/1.3671991
/content/aip/journal/apl/99/26/10.1063/1.3671991
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3671991
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The current-voltage curves are the resistive switching characteristics of Ni:SiOx film before and after SCCO2 treatment. The current in high resistance state of post-treated Ni:SiOx film is reduced about 30 times from 9 μA to 0.3 μA.

Image of FIG. 2.
FIG. 2.

(Color online) The current conduction curves in the Ni:SiOx film before and after SCCO2 treatment. The schematic carrier transport band diagrams in the Ni:SiOx film before and after SCCO2 treatment.

Image of FIG. 3.
FIG. 3.

(Color online) The comparison of FTIR spectra of Ni:SiOx film before and after SCCO2 treatment. The anti-symmetric stretch mode intensity of Si-O-Si bond is increased, and the stretch mode intensity of O-H bond is reduced in Ni:SiOx film after SCCO2 treatment.

Image of FIG. 4.
FIG. 4.

(Color online) XPS spectra of Ni 2p3/2 core level in Ni:SiOx film before and after SCCO2 treatment. The mole fraction of metallic and hydroxy nickel bonds in Ni:SiOx film is reduced obviously but that of Ni-O bonds is increased after SCCO2 treatment.

Image of FIG. 5.
FIG. 5.

(Color online) The schematic diagram of passivation mechanism of SCCO2 treatment on Ni:SiOx film.

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/content/aip/journal/apl/99/26/10.1063/1.3671991
2011-12-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3671991
10.1063/1.3671991
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