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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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10.1063/1.3671991
/content/aip/journal/apl/99/26/10.1063/1.3671991
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3671991
/content/aip/journal/apl/99/26/10.1063/1.3671991
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/content/aip/journal/apl/99/26/10.1063/1.3671991
2011-12-27
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3671991
10.1063/1.3671991
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