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Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
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10.1063/1.3672030
/content/aip/journal/apl/99/26/10.1063/1.3672030
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672030
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The room-temperature spectral responsivity of the GaN MSM detectors with Ni/GaN/Au and Ni/GaN/Ni structures at 5 V bias. The inset is the schematic device structure of the Ni/GaN/Au MSM detector.

Image of FIG. 2.
FIG. 2.

(Color online) Dark I-V curves of the two GaN MSM detectors.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The room-temperature spectral responsivity of the Ni/GaN/Au detector under different bias voltages. The inset is the spectral responsivity under 0 V bias. (b) The peak responsivity of the two types of detectors under different biases.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic illustration of the bandgap alignment of the Ni/GaN/Au detector under different direct biases.

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/content/aip/journal/apl/99/26/10.1063/1.3672030
2011-12-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672030
10.1063/1.3672030
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