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Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of the as-grown tin-doped CdS whisker sample, and the locally amplified SEM image of a representative whisker (inset) and (b) the far-field PL spectrum collected from one representative whisker (R = 880 nm). Inset: schematic of the hexagonal cross section of the surface doped whiskers, with light being confined in the WG mode resonator due to TIR through two different loop paths, hexagon (solid line arrows) and triangular (dashed line arrows). Tin doping (defect state) zone is highlighted by grey area.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Pumping power dependent PL spectra. The curves are vertically offset for clarity. Inset: pumping power dependent PL intensity showing lasing threshold at roughly 28 kW/cm2. (b) The resonant peak dependent interference order N for whisker with a radius of 880 nm. Lines are the calculated values according to Eq. (1); symbols represent the experimental results.

Image of FIG. 3.
FIG. 3.

(Color online) Calculated near-field WG mode intensity pattern and corresponding interference orders in the cross-section of a whisker with radius of 880 nm. (a) TM-mode and (b) TE-mode.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers